HN1B04FE-Y,LF

画像は参考用です

製品仕様

分類
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V, - 50 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
100 mV
Configuration
Dual
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
80 MHz, 80 MHz
Maximum DC Collector Current
150 mA
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-563-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
100 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1B04
Technology
SI
Transistor Polarity
NPN, PNP
Unit Weight

最新の評価

everything as it is written in the description of the same deductible prodovtsu deserved

My package arrived wet, not know where occurs this fact, but working all right

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Perfectly.

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

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