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HN1B01FDW1T1G

HN1B01FDW1T1G
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製品仕様

分類
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
- 0.15 V
Configuration
Dual
Continuous Collector Current
0.2 A
DC Collector/Base Gain hfe Min
200
Emitter- Base Voltage VEBO
7 V
Height
0.94 mm
Length
3 mm
Maximum DC Collector Current
0.2 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SC-74-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
380 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1B01FDW1
Technology
SI
Transistor Polarity
NPN, PNP
Unit Weight
Width
1.5 mm

商品カテゴリ

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最新の評価

事後評価
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
fast delivery, item as described, thanks!!
Works. Find the price of this product is very good
High Quality driver, works excellent. It came to Moscow for 7 days.
Packed medium, in transit could поврелиться. But since it's safe, work perfectly
もっと

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