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HN1B01F-GR(TE85L,F

HN1B01F-GR(TE85L,F
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製品仕様

分類
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
50 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
0.1 V
Configuration
Dual
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
80 MHz
Maximum DC Collector Current
150 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SM-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
300 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1B01
Technology
SI
Transistor Polarity
PNP

商品カテゴリ

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最新の評価

事後評価
Quick delivery. Secure packing. Excellent product. Thank you
Takes 8 days to Japan. Good!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Decent quality, not минвелл certainly, but enough decent
Great product. Arrived ahead of time. Thank you
もっと

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