D2019UK

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モデル
D2019UK
分類
RF MOSFET Transistors
RoHS
データシート
説明
RF MOSFET Transistors Silicon DMOS RF FET 2.5W-28V-1GHz SE

製品仕様

分類
RF MOSFET Transistors
Configuration
Single
Gain
13 dB
Height
2.18 mm
Id - Continuous Drain Current
1 A
Length
5.08 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Operating Frequency
1 GHz
Output Power
2.5 W
Package / Case
SO-8
Pd - Power Dissipation
17.5 W
Product Type
RF MOSFET Transistors
Technology
SI
Transistor Polarity
N-Channel
Type
RF Power MOSFET
Vds - Drain-Source Breakdown Voltage
65 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V to 5 V
Width
4.06 mm

最新の評価

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

it is safe and sound all, thank you seller!

packed pretty good, all is ok,-seller.

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

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