- モデル
- IKFW60N60DH3EXKSA1
- RoHS
- データシート
- 説明
- IGBT Transistors HOME APPLIANCES 14
製品仕様
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 2.2 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 53 A
- Continuous Collector Current Ic Max
- 74 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 30 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- PG-TO247-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 141 W
- Product Type
- IGBT Transistors
- Technology
- SI
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最新の評価
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Hello! Order received, very happy. Thank you very much!
Flavia
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Parcel received shook cool all 10 pieces is not checked check unsubscribe
Bas van den Boogaard
IKFW60N60DH3EXKSA1 関連モデル
IKFW60N60DH3EXKSA1 関連ニュース
03/14/2023
03/13/2023
03/13/2023
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