モデル IKFW40N60DH3EXKSA1 分類 IGBT Transistors RoHS データシート IKFW40N60DH3EXKSA1 説明 IGBT Transistors HOME APPLIANCES 14
分類 IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 2.3 V Configuration Single Continuous Collector Current at 25 C 34 A Continuous Collector Current Ic Max 44 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 30 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case PG-TO247-3 Packaging Tube Part # Aliases Pd - Power Dissipation 111 W Product Type IGBT Transistors Technology SI