- モデル
- IKFW50N60DH3EXKSA1
- RoHS
- データシート
- 説明
- IGBT Transistors HOME APPLIANCES 14
製品仕様
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 2.2 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 40 A
- Continuous Collector Current Ic Max
- 60 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 30 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- PG-TO247-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 130 W
- Product Type
- IGBT Transistors
- Technology
- SI
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最新の評価
everything as it is written in the description of the same deductible prodovtsu deserved
Aleksov
My package arrived wet, not know where occurs this fact, but working all right
Eddy Hustinx
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
Hello! Order received, very happy. Thank you very much!
Flavia
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
IKFW50N60DH3EXKSA1 関連モデル
IKFW50N60DH3EXKSA1 関連ニュース
03/14/2023
03/13/2023
03/13/2023
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