モデル IKB40N65EH5ATMA1 分類 IGBT Transistors RoHS データシート IKB40N65EH5ATMA1 説明 IGBT Transistors 40A 650V TRENCHSTOP 5 fast H5 IGBT copacked with 40A Rapid 1 diode
分類 IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.65 V Configuration Single Continuous Collector Current at 25 C 74 A Continuous Collector Current Ic Max 74 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Reel Packaging Cut Tape Part # Aliases Pd - Power Dissipation 250 W Product Type IGBT Transistors Series TRENCHSTOP 5 Technology SI