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IKQ50N120CT2XKSA1

IKQ50N120CT2XKSA1
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製品仕様

分類
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Configuration
Single
Continuous Collector Current at 25 C
100 A
Continuous Collector Current Ic Max
100 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO247-3-46
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
652 W
Product Type
IGBT Transistors
Technology
SI
Unit Weight

商品カテゴリ

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最新の評価

事後評価
Teşekkürler
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
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IKQ50N120CT2XKSA1 関連モデル

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