モデル HN1C01FU-GR,LF 分類 Bipolar Transistors - BJT RoHS データシート HN1C01FU-GR,LF 説明 Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 100 mV Configuration Dual DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 400 at 2 mA Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 80 MHz Maximum DC Collector Current 150 mA Maximum Operating Temperature + 125 C Mounting Style SMD/SMT Package / Case SOT-363-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 200 mW Product Type BJTs - Bipolar Transistors Series HN1C01 Technology SI Transistor Polarity NPN Unit Weight