モデル HN1C01F-GR(TE85L,F 分類 Bipolar Transistors - BJT RoHS データシート HN1C01F-GR(TE85L,F 説明 Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 0.1 V Configuration Dual Continuous Collector Current 150 mA DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 400 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 80 MHz Maximum DC Collector Current 150 mA Mounting Style SMD/SMT Package / Case SOT-26-6 Packaging Cut Tape Packaging MouseReel Packaging Reel Pd - Power Dissipation 300 mW Product Type BJTs - Bipolar Transistors Series HN1C01 Technology SI Transistor Polarity NPN Unit Weight