モデル 2N2222Ae3/TR 分類 Bipolar Transistors - BJT RoHS データシート 2N2222Ae3/TR 説明 Bipolar Transistors - BJT BJTs
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 75 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 0.3 V Configuration Single DC Collector/Base Gain hfe Min 30 at 500 mA, 10 V DC Current Gain hFE Max 325 at 1 mA, 10 V Emitter- Base Voltage VEBO 6 V Maximum DC Collector Current 800 mA Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-206AA-3 Packaging Reel Pd - Power Dissipation 0.5 W Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN