- モデル
- 2N2218
- RoHS
- データシート
- 説明
- Bipolar Transistors - BJT NPN 60Vcbo 30Vceo 5.0Vebo 800mA 800mW
製品仕様
- Collector- Base Voltage VCBO
- 60 V
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector-Emitter Saturation Voltage
- 1.6 V
- Configuration
- Single
- Continuous Collector Current
- 800 mA
- DC Collector/Base Gain hfe Min
- 20 at 150 mA, 1 V
- Emitter- Base Voltage VEBO
- 5 V
- Gain Bandwidth Product fT
- 250 MHz
- Maximum Operating Temperature
- + 200 C
- Minimum Operating Temperature
- - 65 C
- Mounting Style
- Through Hole
- Package / Case
- TO-39-3
- Packaging
- Bulk
- Part # Aliases
- Pd - Power Dissipation
- 800 mW
- Product Type
- BJTs - Bipolar Transistors
- Technology
- SI
- Transistor Polarity
- NPN
- Unit Weight
商品カテゴリ
Circuit Protection
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Test & Measurement
20,391 製品
最新の評価
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
it is safe and sound all, thank you seller!
Arturo Madril
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
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2N2218 関連モデル
2N2218 関連ニュース
03/14/2023
03/13/2023
03/13/2023
関連キーワード 2N22
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- 2N2218 成分
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