- モデル
- 2N2906A
- RoHS
- データシート
- 説明
- Bipolar Transistors - BJT PNP Gen Pur SS
製品仕様
- Collector- Base Voltage VCBO
- 60 V
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector-Emitter Saturation Voltage
- 2.6 V
- Configuration
- Single
- DC Collector/Base Gain hfe Min
- 40 at 150 mA, 10 V
- Emitter- Base Voltage VEBO
- 5 V
- Gain Bandwidth Product fT
- 200 MHz
- Maximum DC Collector Current
- 600 mA
- Maximum Operating Temperature
- + 200 C
- Minimum Operating Temperature
- - 65 C
- Mounting Style
- Through Hole
- Package / Case
- TO-18
- Packaging
- Bulk
- Part # Aliases
- Pd - Power Dissipation
- 4000 mW
- Product Type
- BJTs - Bipolar Transistors
- Series
- 2N2906
- Technology
- SI
- Transistor Polarity
- PNP
- Unit Weight
商品カテゴリ
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最新の評価
Teşekkürler
Ashir Hussain
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Yes, they are all here. :)
sudheer kumar sirra
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
2N2906A 関連ニュース
03/14/2023
03/13/2023
03/13/2023
関連キーワード 2N29
- 2N2906A 統合された
- 2N2906A RoHS
- 2N2906A PDFデータシート
- 2N2906A データシート
- 2N2906A 部
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- 2N2906A PDF
- 2N2906A 成分
- 2N2906A IC
- 2N2906A PDFをダウンロード
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- 2N2906A 技術データ
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