モデル 2N2904 分類 Bipolar Transistors - BJT RoHS データシート 2N2904 説明 Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 0.6A 0.8W
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 40 V Collector-Emitter Saturation Voltage 1.6 V Configuration Single Continuous Collector Current 0.6 A DC Collector/Base Gain hfe Min 20 at 100 uA, 10 V Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 200 MHz Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-39-3 Packaging Bulk Part # Aliases Pd - Power Dissipation 800 mW Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity PNP Unit Weight