モデル ZHB6790TA 分類 Bipolar Transistors - BJT RoHS データシート ZHB6790TA 説明 Bipolar Transistors - BJT H-Bridge-40V
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 50 V Collector- Emitter Voltage VCEO Max 40 V Collector-Emitter Saturation Voltage - 0.75 V Configuration Quad DC Collector/Base Gain hfe Min 500 at 100 mA, 2 V at NPN, 400 at 1 A, 2 V at NPN, 150 at 2 A, 2 V at NPN, 300 at 100 mA, 2 V at PNP, 200 at 1 A, 2 V at PNP, 150 at 2 A, 2 V at PNP DC Current Gain hFE Max 500 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 100 MHz, 150 MHz Height 1.6 mm Length 6.7 mm Maximum DC Collector Current 2 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SM-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 2000 mW Product Type BJTs - Bipolar Transistors Series ZHB6790 Technology SI Transistor Polarity NPN Width 3.7 mm