モデル ZHB6718TA 分類 Bipolar Transistors - BJT RoHS データシート ZHB6718TA 説明 Bipolar Transistors - BJT H-Bridge-20V
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 20 V Collector- Emitter Voltage VCEO Max 20 V Collector-Emitter Saturation Voltage 130 mV Configuration Quad Continuous Collector Current 2.5 A DC Collector/Base Gain hfe Min 200 at 10 mA, 2 V at NPN, 300 at 100 mA, 2 V at NPN, 200 at 2 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 300 at 100 mA, 2 V at PNP, 150 at 2 A, 2 V at PNP, 35 at 4 A, 2 V at PNP DC Current Gain hFE Max 200 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 140 MHz Height 1.6 mm Length 6.7 mm Maximum DC Collector Current 2.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SM-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 2000 mW Product Type BJTs - Bipolar Transistors Series ZHB6718 Technology SI Transistor Polarity NPN, PNP Unit Weight Width 3.7 mm