モデル 2N2222AUA 分類 Bipolar Transistors - BJT RoHS データシート 2N2222AUA 説明 Bipolar Transistors - BJT NPN G.P. Transistor 4 Pin
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 75 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 1 V Configuration Single Continuous Collector Current 0.8 A Emitter- Base Voltage VEBO 6 V Maximum DC Collector Current 800 mA Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Packaging Bulk Pd - Power Dissipation 500 mW Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN