モデル IKD10N60RAATMA2 分類 IGBT Transistors RoHS データシート IKD10N60RAATMA2 説明 IGBT Transistors IGBT PRODUCTS
分類 IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.65 V Configuration Single Continuous Collector Current at 25 C 20 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Reel Part # Aliases Pd - Power Dissipation 150 W Product Type IGBT Transistors Series RC Technology SI Tradename TRENCHSTOP