- モデル
- IKD10N60RATMA1
- RoHS
- データシート
- 説明
- IGBT Transistors IGBT w/ INTG DIODE 600V 20A
製品仕様
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 20 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Part # Aliases
- Pd - Power Dissipation
- 150 W
- Product Type
- IGBT Transistors
- Series
- RC
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
商品カテゴリ
Circuit Protection
157,625 製品
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2,137,436 製品
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103,645 製品
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21,131 製品
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46,355 製品
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55,700 製品
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67,469 製品
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76,118 製品
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2,029,037 製品
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278,174 製品
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575,056 製品
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61,386 製品
Test & Measurement
20,391 製品
最新の評価
Teşekkürler
Ashir Hussain
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Pat Davis
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
IKD10N60RATMA1 関連モデル
IKD10N60RATMA1 関連ニュース
03/14/2023
03/13/2023
03/13/2023
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