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IKB30N65ES5ATMA1

IKB30N65ES5ATMA1
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製品仕様

分類
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.35 V
Configuration
Single
Continuous Collector Current at 25 C
62 A
Continuous Collector Current Ic Max
62 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
188 W
Product Type
IGBT Transistors
Technology
SI

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最新の評価

事後評価
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Everything is excellent! recommend this seller!
Works. Find the price of this product is very good
Goods came in two weeks. Well packed. Track number tracked
The timer is running. 10 PCS. Packed properly.
もっと

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IKB30N65ES5ATMA1 関連モデル

IKB30N65EH5ATMA1
IKB30N65EH5ATMA1
コレクション BOMに参加する
IKB30N65ES5ATMA1
IKB30N65ES5ATMA1
コレクション BOMに参加する

IKB30N65ES5ATMA1 関連ニュース

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