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IKB30N65EH5ATMA1

IKB30N65EH5ATMA1
画像は参考用です
モデル
IKB30N65EH5ATMA1
分類
IGBT Transistors
RoHS
データシート
説明
IGBT Transistors Infineon s 650 V, 30 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package, redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for h
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製品仕様

分類
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.65 V
Configuration
Single
Continuous Collector Current at 25 C
55 A
Continuous Collector Current Ic Max
55 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
188 W
Product Type
IGBT Transistors
Series
650V TRENCHSTOP 5
Technology
SI
Tradename
TRENCHSTOP

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最新の評価

事後評価
Teşekkürler
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Yes, they are all here. :)
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
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