モデル 2N2907A 分類 Bipolar Transistors - BJT RoHS データシート 2N2907A 説明 Bipolar Transistors - BJT PNP Gen Pur SS
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 60 V Collector-Emitter Saturation Voltage 2.6 V Configuration Single Continuous Collector Current - 0.6 A DC Collector/Base Gain hfe Min 40 at 150 mA, 10 V Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 200 MHz Height 5.33 mm Length 5.84 mm Maximum DC Collector Current 600 mA Maximum Operating Temperature + 200 C Mounting Style Through Hole Package / Case TO-18 Packaging Bulk Part # Aliases Product Type BJTs - Bipolar Transistors Series 2N2907 Technology SI Transistor Polarity PNP Width 5.84 mm