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2N2218AL/TR

2N2218AL/TR
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製品仕様

分類
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
75 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
0.3 V
Configuration
Single
DC Collector/Base Gain hfe Min
20 at 500 mA, 10 V
DC Current Gain hFE Max
325 at 1 mA, 10 V
Emitter- Base Voltage VEBO
6 V
Maximum DC Collector Current
800 mA
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-5-3
Packaging
Reel
Pd - Power Dissipation
3 W
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

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最新の評価

事後評価
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
goods very well received very good quality
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
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