モデル 2N2221 分類 Bipolar Transistors - BJT RoHS データシート 2N2221 説明 Bipolar Transistors - BJT NPN 60Vcbo 30Vceo 5.0Vebo 800mA 500mW
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 30 V Collector-Emitter Saturation Voltage 1.6 V Configuration Single Continuous Collector Current 800 mA DC Collector/Base Gain hfe Min 15 at 10 mA, 10 V Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 250 MHz Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-18 Packaging Bulk Part # Aliases Pd - Power Dissipation 500 mW Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN