2N2222A

画像は参考用です

製品仕様

分類
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
75 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
300 mV
Configuration
Single
Continuous Collector Current
800 mA
DC Collector/Base Gain hfe Min
75 at 1 mA, 10 VDC
DC Current Gain hFE Max
325 at 1 mA, 10 VDC
Emitter- Base Voltage VEBO
6 V
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-18-3
Packaging
Bulk
Pd - Power Dissipation
500 mW
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

最新の評価

Teşekkürler

Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

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