モデル 2N2219 PBFREE 分類 Bipolar Transistors - BJT RoHS データシート 2N2219 PBFREE 説明 Bipolar Transistors - BJT 60Vcbo 30Vceo 5.0Vebo 800mA 800mW
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 30 V Collector-Emitter Saturation Voltage 1.6 V Configuration Single Continuous Collector Current 800 mA DC Collector/Base Gain hfe Min 100 at 150 mA, 10 V DC Current Gain hFE Max 300 at 150 mA, 10 V Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 250 MHz Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-39-3 Packaging Bulk Pd - Power Dissipation 800 mW Product Type BJTs - Bipolar Transistors Series 2N22 Technology SI Transistor Polarity NPN