分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 75 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 300 mV Configuration Single DC Collector/Base Gain hfe Min 75 at 1 mA, 10 VDC DC Current Gain hFE Max 325 at 1 mA, 10 VDC Emitter- Base Voltage VEBO 6 V Maximum DC Collector Current 800 mA Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Packaging Waffle Pd - Power Dissipation 500 mW Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN