- モデル
- 2N2222Ae3
- RoHS
- データシート
- 説明
- Bipolar Transistors - BJT BJTs
製品仕様
- Collector- Base Voltage VCBO
- 75 V
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector-Emitter Saturation Voltage
- 1 V
- Configuration
- Single
- Continuous Collector Current
- 800 mA
- DC Collector/Base Gain hfe Min
- 30
- Emitter- Base Voltage VEBO
- 6 V
- Gain Bandwidth Product fT
- 100 MHz
- Maximum DC Collector Current
- 800 mA
- Maximum Operating Temperature
- + 200 C
- Minimum Operating Temperature
- - 65 C
- Mounting Style
- Through Hole
- Package / Case
- TO-18-3
- Packaging
- Bulk
- Pd - Power Dissipation
- 500 mW
- Product Type
- BJTs - Bipolar Transistors
- Technology
- SI
- Transistor Polarity
- NPN
商品カテゴリ
Circuit Protection
157,625 製品
Connectors
2,137,436 製品
Electromechanical
285,583 製品
Embedded Solutions
103,645 製品
Enclosures
21,131 製品
Engineering Development Tools
46,355 製品
Industrial Automation
55,700 製品
LED Lighting
67,469 製品
Optoelectronics
76,118 製品
Passive Components
2,029,037 製品
Power
278,174 製品
Semiconductors
575,056 製品
Sensors
61,386 製品
Test & Measurement
20,391 製品
最新の評価
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Hello! Order received, very happy. Thank you very much!
Flavia
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Parcel received shook cool all 10 pieces is not checked check unsubscribe
Bas van den Boogaard
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2N2222Ae3 関連モデル
2N2222Ae3 関連ニュース
03/14/2023
03/13/2023
03/13/2023
関連キーワード 2N22
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