モデル 2N2222A 分類 Bipolar Transistors - BJT RoHS データシート 2N2222A 説明 Bipolar Transistors - BJT NPN Gen Pur SS
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 75 V Collector- Emitter Voltage VCEO Max 40 V Collector-Emitter Saturation Voltage 1 V Configuration Single DC Collector/Base Gain hfe Min 35 Emitter- Base Voltage VEBO 6 V Gain Bandwidth Product fT 300 MHz Height 5.33 mm Length 5.84 mm Maximum DC Collector Current 0.8 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-18 Packaging Bulk Part # Aliases Pd - Power Dissipation 400 mW Product Type BJTs - Bipolar Transistors Series 2N2222 Technology SI Transistor Polarity NPN Unit Weight Width 5.84 mm