モデル 2N2905A 分類 Bipolar Transistors - BJT RoHS データシート 2N2905A 説明 Bipolar Transistors - BJT PNP Gen Pur SS
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 60 V Collector-Emitter Saturation Voltage 1.6 V Configuration Single Continuous Collector Current 0.45 A DC Collector/Base Gain hfe Min 75 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 200 MHz Height 6.6 mm Length 9.4 mm Maximum DC Collector Current 0.6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-39-3 Packaging Bulk Part # Aliases Pd - Power Dissipation 600 mW Product Type BJTs - Bipolar Transistors Series 2N2905 Technology SI Transistor Polarity PNP Unit Weight Width 9.4 mm