分類 MOSFET Channel Mode Enhancement Configuration Single Fall Time 16 ns Forward Transconductance - Min 400 ms Height 5.33 mm Id - Continuous Drain Current 500 mA Length 5.21 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-92-3 Packaging Bulk Pd - Power Dissipation 1 W Product Type MOSFET Rds On - Drain-Source Resistance 1.5 Ohms Rise Time 14 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Type FET Typical Turn-Off Delay Time 16 ns Typical Turn-On Delay Time 6 ns Unit Weight Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 10 V Vgs th - Gate-Source Threshold Voltage 600 mV Width 4.19 mm