モデル IKD06N60RATMA1 分類 IGBT Transistors RoHS データシート IKD06N60RATMA1 説明 IGBT Transistors IGBT w/ INTG DIODE 600V 12A
分類 IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.65 V Configuration Single Continuous Collector Current at 25 C 12 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 100 W Product Type IGBT Transistors Series RC Technology SI Tradename TRENCHSTOP