分類 MOSFET Channel Mode Enhancement Configuration Single Fall Time 3 ns Forward Transconductance - Min 225 ms Height 5.33 mm Id - Continuous Drain Current 350 mA Length 5.21 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-92-3 Packaging Bulk Pd - Power Dissipation 1 W Product Type MOSFET Rds On - Drain-Source Resistance 3 Ohms Rise Time 3 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Type FET Typical Turn-Off Delay Time 6 ns Typical Turn-On Delay Time 2 ns Unit Weight Vds - Drain-Source Breakdown Voltage 100 V Vgs - Gate-Source Voltage 10 V Vgs th - Gate-Source Threshold Voltage 600 mV Width 4.19 mm