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2N2060L/TR

2N2060L/TR
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製品仕様

分類
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
100 V
Collector- Emitter Voltage VCEO Max
60 V
Collector-Emitter Saturation Voltage
0.3 V
Configuration
Dual
DC Collector/Base Gain hfe Min
25 at 10 uA, 5 V
DC Current Gain hFE Max
150 at 10 mA, 5 V
Emitter- Base Voltage VEBO
7 V
Maximum DC Collector Current
500 mA
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
TO-78-6
Packaging
Reel
Pd - Power Dissipation
2.12 W
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN

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最新の評価

事後評価
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Shipping a little 1 weeks, normal packing, the procedure is complete.
Fast shippng. Good quality. I recomend this seller.
Great product. Arrived ahead of time. Thank you
もっと

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