- モデル
- IKP40N65F5
- RoHS
- データシート
- 説明
- IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
製品仕様
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.6 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 74 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 255 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP 5 F5
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
商品カテゴリ
Circuit Protection
157,625 製品
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55,700 製品
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76,118 製品
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Test & Measurement
20,391 製品
最新の評価
Teşekkürler
Ashir Hussain
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Pat Davis
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
IKP40N65F5 関連モデル
IKP40N65F5 関連ニュース
03/14/2023
03/13/2023
03/13/2023
関連キーワード IKP4
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- IKP40N65F5 RoHS
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- IKP40N65F5 部
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- IKP40N65F5 PDF
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