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IKP20N60H3

IKP20N60H3
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製品仕様

分類
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Single
Continuous Collector Current at 25 C
40 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
170 W
Product Type
IGBT Transistors
Series
HighSpeed 3
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

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最新の評価

事後評価
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Hello! Order received, very happy. Thank you very much!
Decent quality, not минвелл certainly, but enough decent
Parcel received shook cool all 10 pieces is not checked check unsubscribe
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