モデル 2N1893 分類 Bipolar Transistors - BJT RoHS データシート 2N1893 説明 Bipolar Transistors - BJT NPN Small Signal Engineering Hold
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 120 V Collector- Emitter Voltage VCEO Max 80 V Collector-Emitter Saturation Voltage 1.2 V Configuration Single Continuous Collector Current 0.45 A DC Collector/Base Gain hfe Min 20 Emitter- Base Voltage VEBO 7 V Gain Bandwidth Product fT 50 MHz Height 6.6 mm Length 9.4 mm Maximum DC Collector Current 0.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-39-3 Packaging Bulk Part # Aliases Pd - Power Dissipation 800 mW Product Type BJTs - Bipolar Transistors Series 2N1893 Technology SI Transistor Polarity NPN Unit Weight Width 9.4 mm