モデル UJ3C120070K3S 分類 MOSFET RoHS データシート UJ3C120070K3S 説明 MOSFET 1200V/70mOhm SiC CASCODE G3 TO-247-3L REDUCED Rth
分類 MOSFET Channel Mode Enhancement Configuration Single Fall Time 9 ns Id - Continuous Drain Current 34.5 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Pd - Power Dissipation 254.2 W Product Type MOSFET Qg - Gate Charge 46 nC Rds On - Drain-Source Resistance 90 mOhms Rise Time 17 ns Technology SiC Transistor Polarity N-Channel Transistor Type 1 - N Channel Typical Turn-Off Delay Time 58 ns Typical Turn-On Delay Time 38 ns Vds - Drain-Source Breakdown Voltage 1.2 kV Vgs - Gate-Source Voltage 12 V Vgs th - Gate-Source Threshold Voltage 6 V