モデル R5009ANX 分類 MOSFET RoHS データシート R5009ANX 説明 MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA
分類 MOSFET Channel Mode Enhancement Configuration Single Fall Time 28 ns Id - Continuous Drain Current 9 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Packaging Reel Packaging Cut Tape Part # Aliases Pd - Power Dissipation 51 W Product Type MOSFET Qg - Gate Charge 21 nC Rds On - Drain-Source Resistance 550 mOhms Rise Time 20 ns Series R5009ANX Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 62 ns Typical Turn-On Delay Time 30 ns Unit Weight Vds - Drain-Source Breakdown Voltage 500 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 2.5 V