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F20W60C3-7100

F20W60C3-7100
画像は参考用です
モデル
F20W60C3-7100
分類
MOSFET
RoHS
データシート
説明
MOSFET Hi Switching Speed High Voltage
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製品仕様

分類
MOSFET
Fall Time
60 ns
Forward Transconductance - Min
8.7 S
Id - Continuous Drain Current
20 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
MTO-3P-3
Packaging
Tube
Pd - Power Dissipation
75 W
Product Type
MOSFET
Qg - Gate Charge
87 nC
Rds On - Drain-Source Resistance
190 mOhms
Rise Time
60 ns
Technology
SI
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
355 ns
Typical Turn-On Delay Time
32 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V

商品カテゴリ

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最新の評価

事後評価
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Quick delivery. Secure packing. Excellent product. Thank you
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
High Quality driver, works excellent. It came to Moscow for 7 days.
fast delivery
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F20W60C3-7100 関連モデル

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