分類 MOSFET Channel Mode Enhancement Configuration Single with ESD Protection Diode Fall Time 3.5 ns Height 0.95 mm Id - Continuous Drain Current 3.5 A Length 3 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-346-3 Packaging Cut Tape Packaging MouseReel Packaging Reel Part # Aliases Pd - Power Dissipation 1 W Product MOSFET Product Type MOSFET Qg - Gate Charge 6 nC Rds On - Drain-Source Resistance 56 mOhms Rise Time 7.5 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Type Power MOSFET Typical Turn-Off Delay Time 10 ns Typical Turn-On Delay Time 5.5 ns Unit Weight Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V Width 1.8 mm