モデル IKB20N65EH5ATMA1 分類 IGBT Transistors RoHS データシート IKB20N65EH5ATMA1 説明 IGBT Transistors Infineon s 650 V, 20 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package, redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for h
分類 IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.65 V Configuration Single Continuous Collector Current at 25 C 38 A Continuous Collector Current Ic Max 38 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Cut Tape Packaging Reel Part # Aliases Pd - Power Dissipation 125 W Product Type IGBT Transistors Series 650V TRENCHSTOP 5 Technology SI Tradename TRENCHSTOP