- モデル
- IKQ75N120CS6XKSA1
- RoHS
- データシート
- 説明
- IGBT Transistors INDUSTRY 14
製品仕様
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 1.85 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 150 A
- Continuous Collector Current Ic Max
- 150 A
- Gate-Emitter Leakage Current
- 600 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-247-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 880 W
- Product Type
- IGBT Transistors
- Series
- IGBT6
- Technology
- SI
- Tradename
- TRENCHSTOP
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最新の評価
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Great product. Arrived ahead of time. Thank you
Alexey Petrov
IKQ75N120CS6XKSA1 関連モデル
IKQ75N120CS6XKSA1 関連ニュース
03/14/2023
03/13/2023
03/13/2023
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