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HN1A01F-Y(TE85L,F)

HN1A01F-Y(TE85L,F)
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製品仕様

分類
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
50 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
0.1 V
Configuration
Dual
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
80 MHz
Maximum DC Collector Current
150 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-26-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
300 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1A01
Technology
SI
Transistor Polarity
PNP

商品カテゴリ

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最新の評価

事後評価
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Works. Find the price of this product is very good
I received the product right, thank you very much 2018/12/03 ★★★★★
Received very good
All very good. AND packed as you have everything in good condition.
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関連キーワード HN1A

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  • HN1A01F-Y(TE85L,F) 供給
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