モデル 2N2483 分類 Bipolar Transistors - BJT RoHS データシート 2N2483 説明 Bipolar Transistors - BJT NPN Gen Pur SS
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 60 V Collector-Emitter Saturation Voltage 350 mV Configuration Single Continuous Collector Current 0.45 A DC Collector/Base Gain hfe Min 40 Emitter- Base Voltage VEBO 6 V Gain Bandwidth Product fT 60 MHz Height 5.33 mm Length 5.84 mm Maximum DC Collector Current 1 mA Mounting Style Through Hole Package / Case TO-18-3 Packaging Bulk Part # Aliases Product Type BJTs - Bipolar Transistors Series 2N2483 Technology SI Transistor Polarity NPN Unit Weight Width 5.84 mm