モデル 2N2845 分類 Bipolar Transistors - BJT RoHS データシート 2N2845 説明 Bipolar Transistors - BJT NPN Fast SW SS
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 30 V Collector-Emitter Saturation Voltage 1 V Configuration Single DC Collector/Base Gain hfe Min 30 DC Current Gain hFE Max 120 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 250 MHz Height 5.33 mm Length 5.84 mm Mounting Style Through Hole Package / Case TO-18-3 Product Type BJTs - Bipolar Transistors Series 2N2845 Technology SI Transistor Polarity NPN Width 5.84 mm