モデル BC 850CW H6327 分類 Bipolar Transistors - BJT RoHS データシート BC 850CW H6327 説明 Bipolar Transistors - BJT AF TRANSISTOR
分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 50 V Collector- Emitter Voltage VCEO Max 45 V Collector-Emitter Saturation Voltage 200 mV Configuration Single Continuous Collector Current 100 mA DC Collector/Base Gain hfe Min 420 DC Current Gain hFE Max 800 Emitter- Base Voltage VEBO 6 V Gain Bandwidth Product fT 250 MHz Maximum DC Collector Current 200 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case SOT-323-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 330 mW Product Type BJTs - Bipolar Transistors Series BC850 Technology SI Transistor Polarity NPN Unit Weight