分類 Bipolar Transistors - BJT Collector- Base Voltage VCBO 100 V Collector- Emitter Voltage VCEO Max 55 V Collector-Emitter Saturation Voltage 750 mV Configuration Single DC Collector/Base Gain hfe Min 35 DC Current Gain hFE Max 100 Emitter- Base Voltage VEBO 12 V Maximum DC Collector Current 3 A Maximum Operating Temperature + 200 C Minimum Operating Temperature - 65 C Mounting Style Through Hole Package / Case TO-8-3 Packaging Tray Pd - Power Dissipation 1.75 W Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN